參數(shù)資料
型號: FDD6635
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 35V N-Channel PowerTrench MOSFET
中文描述: 15 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT, DPAK-3
文件頁數(shù): 3/8頁
文件大小: 151K
代理商: FDD6635
FDD6635 Rev. C(W)
www.fairchildsemi.com
D
R
P
DS(ON)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 15 A
(Note 2)
0.8
1.2
V
26
16
ns
nC
IF = 15 A, diF/dt = 100 A/μs
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 40°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
θ
JA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
4.
BV(avalanche) rating is guaranteed if device is operated within the UIS SOA boundary of the device.
F
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