參數(shù)資料
型號(hào)： FDB8453LZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET
中文描述： 50 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, TO-263AB, 3 PIN
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 256K
代理商： FDB8453LZ
F
www.fairchildsemi.com
3
2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
100
V
GS
= 4V
V
GS
= 10V
V
GS
=
4.5V
V
GS
= 3V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
20
40
60
80
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 4V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
,
DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 3V
V
GS
= 10V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 17.6A
V
GS
= 10V
N
Figure 4.
2
4
6
8
10
3
6
9
12
15
18
21
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 17.6A
r
D
,
D
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1
2
3
4
5
0
20
40
60
80
100
V
DS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
Source to Drain Diode
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