- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375765 > FDB7042L (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | FDB7042L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) |
| 中文描述： | 50 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 497K |
| 代理商： | FDB7042L |
FDP7042L Rev B(W)
Typical Characteristics
0
1
2
3
4
5
0
5
10
15
20
25
30
35
Q
g
, GATE CHARGE (nC)
I
D
= 50A
V
DS
= 5V
15V
10V
0
1000
2000
3000
4000
5000
6000
0
6
12
18
24
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θ
JC
= 1.8
o
C/W
T
C
= 25
o
C
10ms
1ms
0
200
400
600
800
1000
1
10
100
1000
t
1
, TIME (sec)
SINGLE PULSE
R
θ
JC
= 1.8°C/W
T
C
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
R
θ
JC
(t) = r(t) + R
θ
JC
R
θ
JC
= 1.8 °C/W
T
J
- T
C
= P * R
θ
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDP7042L | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應(yīng)管) |
| FDB8441 | N-Channel PowerTrench MOSFET |
| FDB8442 | N-Channel PowerTrench MOSFET |
| FDB8443 | N-Channel PowerTrench㈢ MOSFET |
| FDB8444 | N-Channel PowerTrench㈢ MOSFET 40V, 70A, 5.5mOhm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB7045L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7045L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-B8 | 制造商:SUNX 功能描述:FIBRE REFLECTIVE M6 2M 制造商:Panasonic Electric Works 功能描述:Slim Body Analog Fiber Sensor 2-Pin |
| FD-B8 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. LONG SENSING RANGE |
| FDB8030L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。