參數(shù)資料
型號: FDB603AL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor(N溝道邏輯電平增強型MOS場效應管)
中文描述: 33 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 3/4頁
文件大小: 414K
代理商: FDB603AL
FDP603AL Rev.D
Typical Electrical Characteristics
0
1
2
3
4
5
0
20
40
60
80
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V =10V
8.07.0
6.0
5.0
4.5
4.0
3.0
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
D
R
D
V = 10V
I = 25A
1
2
3
4
5
0
5
10
15
20
25
30
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = 10V
J
-55°C
25°C
Figure 5. Transfer Characteristics
.
0
20
40
60
80
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
R
D
4.5
5.0
7.0
6.0
8.0
V = 4.0V
10
Figure 1. On-Region Characteristics.
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
20
I
S
25°C
-55°C
V = 0V
J
3
4
5
6
7
8
9
10
0.01
0.02
0.03
0.04
0.05
0.06
V , GATE TO SOURCE VOLTAGE (V)
R
D
I = 12.5A
D
25°C
T = 125°C
Figure 3. On-Resistance Variation
with Temperature
.
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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