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參數(shù)資料
| 型號： | FDB6030 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | N溝道MOSFET的邏輯電平的PowerTrench |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 401K |
| 代理商： | FDB6030 |
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
24mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.961 +0.078/-0.000
24.4 +2/0
1.197
30.4
0.941 – 0.1.079
23.9 – 27.4
See detail AA
Dim A
max
13" Diameter Option
Dim A
Max
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum component rotation
0.9mm
maximum
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
10 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
TO-263AB/D
2
PAK Embossed Carrier Tape
Configuration:
Figure 3.0
TO-263AB/D
2
PAK Reel Configuration:
Figure 4.0
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
T
D
PAK
(24mm)
O263AB/
10.60
15.80
24.0
1.55
1.60
1.75
22.25
11.50
16.0
4.0
4.90
0.450
21.0
0.06
TO-263AB/D
2
PAK Tape and Reel Data and Package Dimensions, continued
August 1999, Rev. B
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| FDB6030BL | N-Channel Logic Level PowerTrench MOSFET |
| FDB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB6030BL | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030BL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB6030BL_Q | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030L | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030L_Q | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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