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參數(shù)資料
| 型號： | FDB6021P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 28 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 80K |
| 代理商： | FDB6021P |
FDP6021P/FDB6021P Rev. B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
–20
V
Breakdown Voltage Temperature
–16
mV/
°
C
V
DS
= –16 V,
V
GS
= 8 V,
V
GS
= –8 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
V
GS
= –4.5 V,
I
D
= –14 A
V
GS
= –2.5 V,
I
D
= –12 A
V
GS
= –1.8 V,
I
D
= –10 A
V
GS
= –4.5V, I
D
= –14 A, T
J
=125
°
C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –14 A
–0.4
–0.7
3
–1.5
V
Gate Threshold Voltage
mV/
°
C
24
31
50
30
33
30
40
65
42
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–40
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1890
302
124
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
13
10
80
50
20
4
7
23
20
128
80
28
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –14 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–28
–1.3
A
V
V
GS
= 0 V,
I
S
= –14 A
–0.9
Notes:
1.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
2.
TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3.
Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
F
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|---|---|
| FDB6021P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB6021P_Q | 功能描述:MOSFET P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDB6030BL | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030BL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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