參數(shù)資料
型號(hào)： FDB3652
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 100V, 61A, 16mз
中文描述： 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數(shù)： 5/11頁
文件大?。?/td> 272K
代理商： FDB3652
2002 Fairchild Semiconductor Corporation
FDB3652 / FDP3652 / FDI3652 Rev. B
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1000
0.1
1
10
100
40
5000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
50
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 50V
I
D
= 61A
I
D
= 30A
WAVEFORMS IN
DESCENDING ORDER:
相關(guān)PDF資料
PDF描述
FDI8442 N-Channel PowerTrench㈢ MOSFET
FDJ1027P P-Channel 1.8V Specified PowerTrench MOSFET
FDJ1028N Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:12V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:72ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
FDJ1032C Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDB3652 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDB3652_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 61A, 16m??
FDB3652_F085 功能描述:MOSFET N-Ch PowerTrench Trench Mos. RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB3652_Q 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB3652SB82059 制造商:Rochester Electronics LLC 功能描述:- Bulk
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