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參數(shù)資料
| 型號(hào)： | FDB2570 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 22 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263, 3 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | FDB2570 |
FDP2570/FDB2570 Rev C(W)
Typical Characteristics
0
10
20
30
40
50
0
3
6
9
12
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
4.0V
4.5V
V
GS
= 10V
5.0V
0.8
1
1.2
1.4
1.6
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 4.0V
10V
4.5V
5.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
0.5
0.9
1.3
1.7
2.1
2.5
2.9
-65
-35
-5
25
55
85
115
145
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 11 A
V
GS
= 10V
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 5.5 A
T
A
= 25
o
C
T
A
= 125
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
-55
o
C
V
DS
= 50V
T
A
= 125
o
C
25
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
-55
o
C
V
GS
= 0V
T
A
= 125
o
C
25
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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| FDB2572 | 功能描述:MOSFET N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB2572_Q | 功能描述:MOSFET N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB-25P | 制造商:Hirose 功能描述: |
| FDB-25P(05) | 制造商:Hirose 功能描述: |
| FDB-25P0L2TI/1 | 制造商:Cinch Connectors 功能描述:25 way straight PCB filtered D plug,5A |
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