參數(shù)資料
型號: FDA2712
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel UltraFET Trench MOSFET 250V, 64A, 34mヘ
中文描述: 64 A, 250 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, TO-3PN, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 325K
代理商: FDA2712
F
FDA2712 Rev. A
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
Figure 2. Transfer Characteristics
1000
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperature
0.08
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
10000
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
10
V
DS
= 50V
V
DS
= 125V
V
DS
= 200V
0.1
1
10
1
10
100
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
I
D
,
V
DS
, Drain-Source Voltage[V]
4
6
8
10
1
10
100
-55
o
C
150
o
C
* Notes :
1. V
DS
= 20V
2. 250
μ
s Pulse Test
25
o
C
I
D
,
V
GS
,Gate-Source Voltage[V]
0.3
0.6
0.9
1.2
1.5
1
10
100
1000
V
GS
= 0V
150
o
C
I
S
,
V
SD
, Body Diode Forward Voltage [V]
25
o
C
0
50
100
150
200
0.02
0.04
0.06
* Note : T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
D
[
Ω
]
,
D
I
D
, Drain Current [A]
0.1
1
10
0
2000
4000
6000
8000
C
oss
C
iss
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
C
V
DS
, Drain-Source Voltage [V]
30
0
20
40
60
80
100
120
0
2
4
6
8
* Note : I
D
= 80A
V
G
,
Q
g
, Total Gate Charge [nC]
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