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參數(shù)資料
| 型號： | FCX605 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR |
| 中文描述： | 120伏特高壓NPN硅達(dá)林頓晶體管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 107K |
| 代理商： | FCX605 |
ISSUE 1 - J ULY 2001
FCX605
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
140
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
120
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
10
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
100
10
nA
μA
V
CB
=10V
V
CB
= 120V
Tamb = 100°C
Emitter Cut-Off Current
I
EBO
0.1
μA
V
EB
= 8V
Collector Emitter Cut-Off Current
I
CES
10
μA
V
CES
=120V
Collector-Emitter Saturation
Voltage
V
CE(sat)
1
1.5
V
V
I
C
=250mA, I
= 0.25mA*
I
C
=1A, I
B
=1mA*
Base-Emitter Saturation Voltage
V
BE(sat)
1.8
V
I
C
=1A, I
B
= 1mA*
Base-Emitter Turn-On Voltage
V
BE(on)
1.7
V
I
C
= 1A, V
CE
= 5V*
Static Forward Current Transfer
Ratio
h
FE
2K
5K
2K
0.5
100K
I
C
= 50mA, V
CE
= 5V*
I
C
=500mA, V
= 5V*
I
C
=1A, V
CE
= 5V*
I
C
=2A, V
CE
= 5V*
Transition Frequency
f
T
150
MHz
I
=100mA, V
CE
=10V
f=20MHz
Input Capacitance
C
ibo
90
pF
V
CB
=500mV, f=1MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
0.5
μs
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
Turn-Off Time
t
(off)
1.6
μs
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
3
Nb. Spice parameter data is available upon request for this device.
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| FCX619 | 制造商:Diodes Incorporated 功能描述: |
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