參數(shù)資料
型號: FCH10U10
廠商: NIHON INTER ELECTRONICS CORP
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Diode
中文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 1/6頁
文件大?。?/td> 56K
代理商: FCH10U10
SBD
T y pe :
FCH
10
06
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:
1.75g
Rating
Symbol
V
RRM
V
RRSM
FCH10A06
60
Unit
V
V
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
65(pulse width
1
μ
s duty
1/50)
50 Hz Full Sine Wave
Resistive Load
11.1
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
Average Rectified Output Current
I
O
10
Tc=125
°
C
A
RMS Forward Current
I
F(RMS)
A
Surge Forward Current
I
FSM
120
A
Operating J unctionTemperature Range
Storage Temperature Range
Mounting torque
Electrical
Thermal Characteristics
T
jw
T
stg
Ftor
°
C
°
C
N
m
Characteristics
Symbol
Conditions
Min. Typ.
Max.
Unit
Peak Reverse Current
I
RM
Tj= 25
°
C, V
RM
= V
RRM
per arm
Tj= 25
°
C, I
FM
= 5 A
per arm
Rth(j-c) J unction to Case
Rth(c-f) Cace to Fin
-
-
1
mA
Peak Forward Voltage
V
FM
-
-
0.66
V
-
-
-
-
3
°
C
/W
°
C
/W
Thermal Resistance
1.5
FEATURE S
*Similar to TO-220AB Case
*Fully Molded Isolation
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150
°
C
operation
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