參數(shù)資料
型號: FC131
廠商: Sanyo Electric Co.,Ltd.
英文描述: PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
中文描述: 進步黨復(fù)合硅外延平面晶體管的開關(guān)應(yīng)用(與偏置電阻)
文件頁數(shù): 1/2頁
文件大小: 37K
代理商: FC131
52098HA (KT)/2190MO, TS No.3285-1/2
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Ordering number:EN3285
FC131
Specifications
Absolute Maximum Ratings
at Ta = 25C
r
m
a
P
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
SANYO:CP6
Package Dimensions
unit:mm
2067
[FC131]
Features
· On-chip bias resistances (R1=10k
,
R
2=47
k
)
).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC131 is formed with two chips, being equiva-
lent to the 2SA1563, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
C
C
Electrical Characteristics
at Ta = 25C
Note:The specifications shown above are for each individual transistor.
Marking:131
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
V
e
s
r
m
a
B
E
-
e
C
-
e
C
V
V
O
O
B
E
C
C
0
0
5
5
V
V
e
g
a
e
g
a
V
t
e
C
o
p
s
D
s
D
r
w
e
p
m
e
T
e
p
m
e
T
e
s
a
B
e
C
r
e
C
r
e
C
o
P
l
T
n
o
n
u
J
e
g
a
S
-
m
r
e
C
k
a
e
P
E
V
O
B
E
IC
IP
C
PC
PT
j
g
T
6
0
0
0
0
0
0
0
0
0
0
5
5
V
1
2
2
3
1
1
A
A
W
W
m
m
m
m
t
n
t
u
1
n
o
p
+
o
5
5
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
1
5
2
1
m
t
t
e
C
e
C
e
C
n
G
P
h
w
a
a
p
V
n
o
S
w
o
d
k
a
e
B
w
o
d
k
a
e
B
e
S
-
F
F
O
t
p
e
S
-
N
O
t
p
n
a
e
R
t
p
n
e
n
c
a
e
R
f
C
f
C
f
C
t
e
C
d
n
a
B
-
G
C
t
p
O
E
-
C
B
-
C
E
-
C
n
r
r
r
m
C
D
e
C
e
C
E
I
I
I
O
O
O
B
E
B
F
fT
o
C
C
E
hE
VB
C
VB
C
VB
E
VE
C
VE
C
VB
C
IC
=
IC
=
IC
=
VE
C
VE
C
I
V
I
V
0
I
V
I
V
5
0
1
0
1
=
m
0
1
μ
0
1
0
0
1
5
=
2
=
0
4
4
5
=
=
=
=
=
E0
=
B0
=
C0
=
C
=
I
V
C
=
V
I
A
B
I
A
E0
R
,
A
μ
I
V
C
I
V
A
A
A
μ
μ
μ
t
7
0
6
7
8
8
5
A
m
z
H
5
m
5
5
M
=
1
=
=
B=
1
=
=
t
u
d
o
e
c
a
a
V
a
V
a
V
a
V
e
o
R
A
0
0
2
1
1
z
H
F
p
V
V
V
V
V
k
M
n
a
b
C
e
g
g
g
e
g
g
V
)
B
C
E
C
)
)
V
)
o
1
R
R
/
R
s
E
)
R
R
B
V
C
B
(
A
m
3
e
e
e
n
n
V
V
O
O
(
0
0
5
5
5
7
E
A
A
μ
m
0
5
0
7
0
1
1
2
9
0
1
3
2
C
c
n
7
3
0
3
3
4
2
9
1
相關(guān)PDF資料
PDF描述
FC132 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
FC133 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
FC134 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
FC135 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
FC136 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FC-131 制造商:Labfacility Limited 功能描述:GLAND 1/8" BSPT 1.5MM PROBE SS 制造商:LABFACILITY 功能描述:GLAND, 1/8" BSPT, 1.5MM PROBE, SS 制造商:LABFACILITY 功能描述:GLAND, 1/8" BSPT, 1.5MM PROBE, SS; Thread Size - Imperial:1/8" BSPT; Material:Stainless Steel; Bore Diameter Nom:1.5mm; Probe Diameter:1.5mm; Thread Type:BSPT ;RoHS Compliant: Yes
FC132 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
FC-132 制造商:Labfacility Limited 功能描述:GLAND 1/8" BSPP 1.5MM PROBE SS
FC133 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
FC-133 制造商:Labfacility Limited 功能描述:GLAND 1/8" BSPT 3MM PROBE SS 制造商:LABFACILITY 功能描述:GLAND, 1/8" BSPT, 3MM PROBE, SS 制造商:LABFACILITY 功能描述:GLAND, 1/8" BSPT, 3MM PROBE, SS; Thread Size - Imperial:1/8" BSPT; Material:Stainless Steel; Bore Diameter Nom:3mm; Probe Diameter:3mm; Thread Type:BSPT ;RoHS Compliant: Yes