參數(shù)資料
型號(hào): FC11
廠商: Sanyo Electric Co.,Ltd.
英文描述: CAP CER 3.3UF 10V Y5V 0805
中文描述: 低頻通用放大器,差分放大器應(yīng)用
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 92K
代理商: FC11
52098HA (KT)/7259TA, TS No.3154-1/3
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amp,
Differential Amp Applications
Ordering number:EN3154
FC11
r
m
a
P
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b
m
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S
s
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n
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C
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R
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a
V
a
V
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c
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n
D
t
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C
e
C
e
a
S
-
D
-
G
e
G
n
D
w
o
V
V
X
S
S
D
D
G
IG
ID
PD
PT
j
g
T
0
0
0
0
0
0
0
0
4
4
1
1
0
0
5
5
V
V
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g
A
A
W
W
m
m
m
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C
C
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5
5
Package Dimensions
unit:mm
2070
[FC11]
G1:Gate1
G2:Gate2
D2:Drain2
SC:Source Common
D1:Drain1
SANYO:CP5
Features
· Adoption of FBET process.
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC11 is formed with two chips, being equivalent
to the 2SK771, placed in one package.
· Excellent in the thermal equilibrium and pair capa-
bility and suitable for use in differential amp.
· Common source.
Electrical Connection
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C
Note*:The FC11 is classified by I
DSS
as follows (unit:mA)
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VS
G
VS
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G
VS
D
VS
D
VS
D
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D
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D
VS
D
VS
D
V
V
I
V
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,
V
0
I
V
0
1
V
0
1
V
0
1
=
0
1
=
0
1
=
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1
=
,
A
2
0
μ
1
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1
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=
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=
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D
=
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V
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1
Marking:11
I
DSS
rank:D,E
The Specifications shown above are for each individual
transistor.
G
S
S
S
S
G
s
V
G
V
G
R
g
V
,
m
s
V
m
V
Y
=
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=
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ID
S
D
I
V
0
1
=
D
A
m
1
=
0
*
V
A
S
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D
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*
2
9
5
9
o
R
r
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c
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a
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I
=
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H
M
H
M
1
m
1
=
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H
k
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1
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A
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Y
,
V
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V
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C
S
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=
1
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1
5
F
F
B
p
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p
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=
A
F
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k
1
0
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2
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5
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