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參數(shù)資料
| 型號(hào)： | FBR3501W |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | FAST RECOVERY BRIDGE RECTIFIERS |
| 中文描述： | 快恢復(fù)整流橋 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | FBR3501W |
RATING AND CHARACTERISTIC CURVES ( FBR3500W - FBR3510W )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
+
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
60Hz RESISTIVE OR INDUCTIVE LOAD
28
21
14
7
35
100
10
1.0
360
400
0
240
160
80
0.1
10
80
0
0.01
1.0
0.1
100
140
0
20
40
60
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
P
C
A
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
Pulse Width = 300
μ
s
2% Duty Cycle
Tc = 55
°
C
+ 0.5
0
- 0.25
- 1.0 A
Trr
1
SET TIME BASE FOR 50/200 ns/cm
1
50
10
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
D.U.T.
50 Vdc
(approx)
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| FBR3502W | FAST RECOVERY BRIDGE RECTIFIERS |
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| FBR3506W | FAST RECOVERY BRIDGE RECTIFIERS |
| FBR3508W | FAST RECOVERY BRIDGE RECTIFIERS |
| FBR3510W | FAST RECOVERY BRIDGE RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FBR3502 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:FAST RECOVERY BRIDGE RECTIFIERS |
| FBR3502W | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:FAST RECOVERY |
| FBR3504 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:FAST RECOVERY BRIDGE RECTIFIERS |
| FBR3504W | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:FAST RECOVERY |
| FBR3506 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:FAST RECOVERY BRIDGE RECTIFIERS |
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