參數(shù)資料
型號： FAP-450
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR
中文描述： 晶體管| MOSFET的| N溝道| 500V五（巴西）直|第14A條（?。﹟對247VAR
文件頁數(shù)： 1/3頁
文件大小： 222K
代理商： FAP-450
FAP-450
FAP-IIS Series
N-channel MOS-FET
500V
0,38
14A
190W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Repetitive Avalanche Rated
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Avalanche Current
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AS
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
A
mJ
W
°C
°C
500
14
56
±30
14
*2
760
*1
190
150
-55 ~ +150
*1) V
CC
= 50V; L = 7mH; I
AS
= 14A; R
G
= 50
; Starting T
ch
= 25°C (See Fig. 1 & 2)
*2) Repetitive Rating : Pulse Width limited by max. Channel Temperature
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
BV
DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=250μA
V
DS
=500V
V
GS
=0V
V
GS
=±30V
I
D
=8A
I
D
=8A
Min.
500
3,0
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
nC
nC
nC
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=250V
V
GS
=10V
R
G
= 6,1W
R
D
= 20
T
ch
=25°C
V
CC
=400V
V
GS
=10V
I
D
= 14A
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
3,0
4,0
25
1,0
100
0,38
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
C
iss
C
oss
C
rss
V
SD
t
rr
Q
rr
10
0,32
14
2200
330
140
18
70
130
70
7
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
4
170
20
90
1,5
1,0
700
9,0
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to ambient
channel to case
Min.
Typ.
Max.
35
0,65
Unit
°C/W
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
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