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參數(shù)資料
| 型號： | F4400R12KS4V3 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 144K |
| 代理商： | F4400R12KS4V3 |
Technische Information / Technical Information
F4-400R12KS4 B2
IGBT-Module
IGBT-Modules
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80°C
T
C
= 25 °C
I
C,nom.
400
A
I
C
570
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C
I
CRM
800
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor
P
tot
3000
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
400
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
800
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
A
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
2.500
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 400A, V
GE
= 15V, Tvj = 25°C
V
CE sat
-
3,20
3,70
V
I
C
= 400A, V
GE
= 15V, T
vj
= 125°C
-
3,85
-
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 16 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
26
-
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
1,7
-
nF
Gateladung
gate charge
V
GE
= -15V ... + 15V, V
CE
= 600V
Q
G
-
4,2
-
μC
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: A.Schulz
date of publication : 2001-11-29
approved by: M.Hierholzer
revision: 3
mA
65.000
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
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5
1/9
F4-400R12KS4 B2_V3.xls
2001-11-29
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