參數(shù)資料
型號(hào)： F3S49092
廠商： Fairchild Semiconductor Corporation
英文描述： 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
中文描述： 20A/10A，12V的，0.060/0.140歐姆，邏輯層次，互補(bǔ)功率MOSFET
文件頁(yè)數(shù)： 4/14頁(yè)
文件大?。?/td> 395K
代理商： F3S49092
2004 Fairchild Semiconductor Corporation
RF3S49092SM Rev. C
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
NOTE:
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 7. SATURATION CHARACTERISTICS
Typical Performance Curves (N-Channel)
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
-4
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
Z
θ
J
,
T
SINGLE PULSE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
50
10
100
1
1
I
D
,
5ms
10ms
100ms
1s
DC
T
J
= MAX RATED, T
C
= 25
o
C
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
t, PULSE WIDTH (s)
1000
100
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
C
= 25
o
C
V
GS
= 5V
1
10
100
10
0.01
100
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
0
10
20
30
0
1
2
3
4
5
40
50
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
V
GS
= 10V
PULSE DURATION = 80
μ
s, T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
6
7
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
RF3S49092SM
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