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參數(shù)資料
| 型號： | F29C51001B |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1MEGABIT(131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| 中文描述： | 1MEGABIT（131072 × 8位）5伏的CMOS閃存 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 143K |
| 代理商： | F29C51001B |
9
F
29C51001T/
F
29C51001B
V1.0
May 1999
SyncMOS
F
29C51001T/
F
29C51001B
Functional Description
The
F
29C51001T/
F
29C51001B consists of 256
equally-sized sectors of 512 bytes each. The 8 KB
lockable Boot Block is intended for storage of the
system BIOS boot code. The boot code is the first
piece of code executed each time the system is
powered on or rebooted.
The
F
29C51001 is available in two versions: the
F
29C51001T with the Boot Block address starting
from 1E000H to 1FFFFH, and the
F
29C51001B
with the Boot Block address starting from 00000H
to 1FFFFH.
Read Cycle
A read cycle is performed by holding both CE
and OE signals LOW. Data Out becomes valid only
when these conditions are met. During a read cycle
WE must be HIGH prior to CE and OE going LOW.
WE must remain HIGH during the read operation
for the read to complete (see Table 1).
Output Disable
Returning OE or CE HIGH, whichever occurs first
will terminate the read operation and place the l/O
pins in the HIGH-Z state.
Standby
The device will enter standby mode when the CE
signal is HIGH. The l/O pins are placed in the
HIGH-Z, independent of the OE signal.
Byte Program Cycle
The
F
29C51001T/
F
29C51001B is programmed
on a byte-by-byte basis. The byte program
operation is initiated by using a specific four-bus-
cycle sequence: two unlock program cycles, a
program setup command and program data
program cycles (see Table 2).
During the byte program cycle, addresses are
latched on the falling edge of either CE or WE,
whichever is last. Data is latched on the rising edge
of CE or WE, whichever is first. The byte program
cycle can be CE controlled or WE controlled.
Sector Erase Cycle
The
F
29C51001T/
F
29C51001B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. Sector erase operation
is initiated by using a specific six-bus-cycle
sequence: Two unlock program cycles, a setup
command, two additional unlock program cycles,
and the sector erase command (see Table 2). A
sector must be first erased before it can be
reprogrammed. While in the internal erase mode,
the device ignores any program attempt into the
device. The internal erase completion can be
determined via DATA polling or toggle bit.
The
F
29C51001T/
F
29C51001B is shipped with
pre-erased sectors (all bits = 1).
8KB Boot Block
512
512
512
512
512
512
512
512
8KB Boot Block
F
29C51001T
F
29C51001B
1FFFFH
1E000H
00000H
01FFFH
51001-13
00000H
8KB Boot Block = 16 Sectors
Table 1. Operation Modes Decoding
Decoding Mode
CE
OE
WE
A
0
A
1
A
9
I/O
Read
V
IL
V
IL
V
IH
A
0
A
1
A
9
READ
Byte Write
V
IL
V
IH
V
IL
A
0
A
1
A
9
PD
Standby
V
IH
X
X
X
X
X
HIGH-Z
Autoselect Device ID
V
IL
V
IL
V
IH
V
IH
V
IL
V
H
CODE
Autoselect Manufacture ID
V
IL
V
IL
V
IH
V
IL
V
IL
V
H
CODE
Enabling Boot Block Protection Lock
V
IL
V
H
V
IL
X
X
V
H
X
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F29C51001T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1MEGABIT(131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| F29C51004 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T12J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T12JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
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