參數(shù)資料
型號(hào)： F2201
廠商： Polyfet RF Devices
英文描述： MGrid Hdr Shrd Vt Slot/Stdf.38AuLF 20Ckt
中文描述： 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁數(shù)： 1/2頁
文件大?。?/td> 32K
代理商： F2201
RF CHARACTERISTICS ( WATTS OUTPUT )
2
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
2Watts Single Ended
Package Style CD
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
20Watts
12
C
o
200
-65
to 150
0.8 A
30V
V
V
50
50
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
dB
%
Relative
10
50
0.2
20:1
Idq =
Idq =
Idq =
0.2
0.2
A,
A,
A,
12.5
Vds =
V,
12.5
Vds =
V,
12.5
Vds =
V,
F = 850 MHz
F = 850 MHz
F = 850 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
40
0.2
1
7
1
0.2
2
2.3
7.5
1.2
8
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.01
Ids =
A,
Vgs = 0V
12.5
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.02
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids =1.6
Vgs = 20V, Vds = 10V
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
A
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
C
o
C
o
C/W
o
F2201S
polyfet rf devices
8/1/97
相關(guān)PDF資料
PDF描述
F2202S TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D)
F2202 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F220L Peripheral IC
F25A05G TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 25A I(C) | TO-247
F25A05K TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 25A I(C) | MODULE-Q
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F2-20-10 制造商:Southco 功能描述:
F22010082 功能描述:工業(yè)移動(dòng)感應(yīng)器和位置傳感器 RESISTIVE & OPTICAL RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor
F22010089 功能描述:工業(yè)移動(dòng)感應(yīng)器和位置傳感器 RESISTIVE & OPTICAL RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor
F2201S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 800MA I(D)
F2202 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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