參數(shù)資料
型號: F2013
廠商: Polyfet RF Devices
英文描述: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 38K
代理商: F2013
F2013 Pout vs Pin F=1000 Mhz; Idq=1.6A; Vds=28v
Pin in Watts
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
Pout
6
7
8
9
10
11
12
Gain
POUT
PIN
Efficiency = 35%
POUT VS PIN GRAPH
F2013
F2A 4 DIE CAPACITANCE
VDS IN VOLTS
1
10
100
0
5
10
15
20
25
30
Crss
Coss
Ciss
F2A 4 DIE IV CURVE
VDS IN VOLTS
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
20
VGS = 2V
VGS = 4V
VGS = 6V
VGS = 8V
VGS = 10V
VGS 12V
F2A 4 DIE GM & ID vs VGS
Vgs in Volts
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97
相關(guān)PDF資料
PDF描述
F2021 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F20308RN02B Miniature ROTA-SLIDE Rotary Switches
F20308RS02QE Miniature ROTA-SLIDE Rotary Switches
F20308RSWCB Miniature ROTA-SLIDE Rotary Switches
F20308RSWCBE Miniature ROTA-SLIDE Rotary Switches
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