參數(shù)資料
型號(hào)： F2012
廠商： Polyfet RF Devices
英文描述： PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述： 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁數(shù)： 1/2頁
文件大?。?/td> 37K
代理商： F2012
RF CHARACTERISTICS ( WATTS OUTPUT )
10
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
10Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
40Watts
4.2
C
o
200
-65
to 150
3.2 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
dB
%
Relative
10
45
0.8
20:1
Idq =
Idq =
Idq =
0.8
0.8
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 1000 MHz
F = 1000 MHz
F = 1000 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
65
0.8
1
7
1
0.8
1
4.8
36
4
24
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.04
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.08
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 4
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
C
o
C
o
C/W
o
F2012
polyfet rf devices
8/1/97
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F20-120 功能描述:電源變壓器 2.5VA 20V CT @ 0.12A Split Pack RoHS:否 制造商:Triad Magnetics 功率額定值:12 VA 初級(jí)電壓額定值:115 V / 230 V 次級(jí)電壓額定值:12 V / 24 V 安裝風(fēng)格:SMD/SMT 一次繞組:Dual Primary Winding 二次繞組:Dual Secondary Winding 長度:2.5 in 寬度:2 in 高度:1.062 in
F2012030040 ABR 制造商:SAVIGNY 功能描述:HINGE PIANO STEEL 制造商:SAVIGNY 功能描述:HINGE, PIANO, STEEL
F2012030040 AIB 制造商:SAVIGNY 功能描述:HINGE PIANO STAINLESS STEEL 制造商:SAVIGNY 功能描述:HINGE, PIANO, STAINLESS STEEL
F2012030050 ABR 制造商:SAVIGNY 功能描述:HINGE PIANO STEEL 制造商:SAVIGNY 功能描述:HINGE, PIANO, STEEL
F2012030050 AIB 制造商:SAVIGNY 功能描述:HINGE PIANO STAINLESS STEEL 制造商:SAVIGNY 功能描述:HINGE, PIANO, STAINLESS STEEL
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