參數(shù)資料
型號： F1510
廠商： Polyfet RF Devices
英文描述： PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述： 專利金金屬化硅柵增強型射頻功率VDMOS晶體管
文件頁數(shù)： 2/2頁
文件大?。?/td> 36K
代理商： F1510
POUT VS PIN GRAPH
F1510
F2A 2 DIE CAPACITANCE
VDS IN VOLTS
1
10
100
0
5
10
15
20
25
30
Crss
Coss
Ciss
F2A 2 DIE IV CURVE
VDS IN VOLTS
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
14
16
18
20
VGS = 2V
VGS = 4V
VGS = 6V
VGS = 8V
VGS = 10V
VGS 12V
F2A 2 DIE GM & ID vs VGS
Vgs in Volts
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97
相關(guān)PDF資料
PDF描述
F1516 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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