參數(shù)資料
型號: F1003
廠商: Polyfet RF Devices
英文描述: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 專利金金屬化硅柵增強型射頻功率VDMOS晶體管
文件頁數(shù): 1/6頁
文件大?。?/td> 104K
代理商: F1003
100322
Low Power 9-Bit Buffer
General Description
The 100322 is a monolithic 9-bit buffer. The device contains
nine non-inverting buffer gates with single input and output.
All inputs have 50 k
pull-down resistors and all outputs are
buffered.
Features
n
30% power reduction of the 100122
n
2000V ESD protection
n
Pin/function compatible with 100122
n
Voltage compensated operating range = 4.2V to 5.7V
n
Available to MIL-STD-883
Logic Symbol
Pin Names
D
1
, D
9
O
1
, O
9
Description
Data Inputs
Data Outputs
DS100308-1
August 1998
1
1998 National Semiconductor Corporation
DS100308
www.national.com
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參數(shù)描述
F100302DCQB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Quint 2-input OR/NOR Gate
F100304 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LOW POWER QUINT AND / NAND GATE
F100314 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LOW POWER QUINT DIFFERENTIAL LINE RECEIVER
F100322 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power 9-Bit Buffer
F100322DC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Nine Bit Buffer