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參數(shù)資料
| 型號： | EUP8051 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Cost 1A Linear Battery Charge Controllers |
| 中文描述： | 低成本1A線性電池充電控制器 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 312K |
| 代理商： | EUP8051 |
EUP8051
1.
Determine the maximum power dissipation, P
D
, in
the transistor.
The worst case power dissipation happens when the
cell voltage,
V
(constant)
, is at its lowest (typically 3.1V
at the beginning of current regulation phase) and
V
I
is at its maximum.
Where
V
D
is the forward voltage
drop across the reverse-blocking diode (if one is
used), and V
CS
is the voltage drop across the current
sense resistor.
P
D
=(V
I(MAX)
V
D
V
CS
V
BAT
) I
REG
--------- (7)
P
D
=(5.5
0.4
0.2
3.1) 1A
P
D
=1.8W
2.
Determine the package size needed in order to keep
the junction temperature below the manufacturer’s
recommended value, T
JMAX
. Calculate the total theta,
θ
(°C/W), needed.
)
A(max)
max(J)
JA
DS8051 Ver 1.2 May. 2005
D
P
T
-
(T
θ
=
-
-------------(8)
1.8
40)
-
(150
JA
θ
=
θ
JA
= 61°C/W
It is recommended to choose a package with a lower
θ
JA
than the number calculated above.
3.
Select a drain-source voltage, V
(DS)
, rating greater
than the maximum input voltage. A 12V device will
be adequate in this example.
4.
Select a device that has at least 50
%
higher drain
current (I
D
) rating than the desired charge current
I
(REG
).
5.
Verify that the available drive is large enough to
supply the desired charge current.
V
(GS)
=(V
D
+V
(CS)
+V
OL(CC)
)
V
(GS)
=(0.4+0.2+1)
4.5
V
(GS)
=-2.9
V
I(min)
-------------- (9)
Where
V
(GS)
is the gate-to-source voltage, V
D
is the
forward voltage drop across the reverse-blocking diode
(if one is used), and
V
CS
is the voltage drop across the
current sense resistor, and V
OL(CC)
is the CC pin output
low voltage specification for the EUP8051.
Select a MOSFET with gate threshold voltage,
V
(GSth)
,
rating less than the calculated V
(GS)
.
Reverse Blocking Protection
The optional reverse-blocking protection diode,
depicted in Figure1&2 provides protection from a
faulted or shorted input, or from a reversed-polarity
input source. Without the protection diode, a faulted of
shorted input would discharge the battery pack through
the body diode of the external pass transistor.
If a reverse-protection diode is incorporated in the
design, it should be chosen to handle the fast charge
current continuously at the maximum ambient
temperature. In addition, the reverse-leakage current of
the diode should be kept as small as possible.
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