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參數(shù)資料
| 型號： | ESD5B5.0ST1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Transient Voltage Suppressor(瞬變電壓抑制器) |
| 中文描述： | 50 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 502-01, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 60K |
| 代理商： | ESD5B5.0ST1G |
BiDirectional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
ESD5B5.0ST1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA for all types)
Device*
V
RWM
(V)
I
R
( A)
@ V
RWM
V
BR
(V) @ I
T
(Note 2)
I
T
C (pF) @ V
R
= 0 V,
f = 1 MHz
Max
Max
Min
Max
mA
Typ
ESD5B5.0ST1G
*Other voltages available upon request.
2. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25
°
C.
5.0
1.0
5.8
7.8
1.0
32
Figure 1. 8 x 20 s Pulse Waveform
100
90
80
70
60
50
40
30
20
10
00
20
40
60
80
t, TIME ( s)
%
t
P
t
r
0
1
2
3
4
0
50
100
t, TIME (ms)
V
HALF VALUE
PEAK VALUE I
PP
t
r
≤
10 s
Figure 2. 10 x 1000 s Pulse Waveform
t
P
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
PEAK VALUE I
PP
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
I
PP
2
HALF VALUE
I
PP
2
Figure 3. Positive 8 kV Contact per IEC 610042
ESD5B5.0ST1G
Figure 4. Negative 8 kV Contact per IEC 610042
ESD5B5.0ST1G
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| ESD5V0D3B-TP | 功能描述:ESD 抑制器 5V, 1.0uA RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
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