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參數(shù)資料
| 型號： | ES2B |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 2 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |
| 中文描述： | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | PLASTIC, HSMA, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 51K |
| 代理商： | ES2B |
- 168 -
.082(2.08)
.076(1.93)
.012(.31)
.006(.15)
.012(.31)
.006(.15)
.008(.20)
.056(1.41)
.035(0.90)
.147(3.73)
.187(4.75)
.103(2.61)
.078(1.99)
.208(5.28)
.200(5.08)
ES2A
THRU
ES2J
2.0 AMPS. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
2.0 Amperes
SMB/DO-214AA
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260
C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.093 gram
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Dimensions in inches and (millimeters)
Symbol
ES
2A
50
ES
2B
100
ES
2C
150
ES
2D
200 300 400
ES
2F
ES
2G
ES
2H
500 600
ES
2J
Units
Maximum Recurrent Peak Reverse
Voltage
Maximum RMS Voltage
V
RRM
V
V
RMS
V
DC
35
50
70
100
105
150
140 210 280
200 300 400
350 420
500 600
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current See Fig. 1
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current
@T
A
=25
℃
at Rated DC Blocking Voltage
@ T
A
=100
℃
Maximum Reverse Recovery Time
( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. Units Mounted on P.C.B. 0.4 x 0.4" (10 x 10mm) Pad Areas
I
(AV)
2.0
A
I
FSM
50
A
V
F
0.95
1.3
1.7
V
I
R
10
350
35
uA
uA
nS
Trr
Cj
R
θ
JA
R
θ
JL
T
J
T
STG
25
20
pF
℃
/W
75
20
-55 to +150
-55 to + 150
℃
℃
相關PDF資料 |
PDF描述 |
|---|---|
| ES2C | 2 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |
| ES2D | 2 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |
| ES2J | 2 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |
| ES2A | SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER |
| ES2B | SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ES2B R4 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 100V 2A 2-Pin SMB T/R |
| ES2B | 制造商:Vishay Semiconductors 功能描述:DIODE SMB FAST 2A 100V |
| ES2B/1 | 功能描述:DIODE FAST 2A 100V SMB RoHS:否 類別:分離式半導體產(chǎn)品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| ES2B/2 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 100V 2A 2-Pin SMB T/R 制造商:Vishay Semiconductors 功能描述:Diode Switching 100V 2A 2-Pin SMB T/R |
| ES2B/2BT | 功能描述:整流器 2.0 Amp 100V 20ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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