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參數(shù)資料
| 型號： | ES29DS160ET-90RTGI |
| 廠商： | 優(yōu)先(蘇州)半導體有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引導扇區(qū)閃存 |
| 文件頁數(shù)： | 45/51頁 |
| 文件大小： | 697K |
| 代理商： | ES29DS160ET-90RTGI |
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ESI
45
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
PACKAGE
JEDEC
xFBD 048
N/A
6.00 mm x 8.00 mm PACKAGE
MIN
NOM
SYMBOL
A
MAX
1.10
NOTE
OVERALL THICK
NESS
BALL HEIGHT
BODY THICKNESS
BODY SIZE
BODY SIZE
BALL FOOTPRINT
BALL FOOTPRINT
ROW MATRIX SIZED
DIRECTION
ROW MATRIX SIZED
DIRECTION
TOTAL BALL COUNT
BALL DIAMETER
BALL PITCH
SOLDER BALL
PLACEMENT
A1
A2
D
E
D1
E1
MD
0.21
0.7
0.25
0.76
0.29
0.82
8.00 BSC
6.00 BSC
5.60 BSC
4.00 BSC
8
ME
6
N
b
e
SD / SE
48
0.30
0.35
0.40
0.80 BSC
0.40 BSC
NOTES:
1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. All dimensions are in millimeters.
3. Ball position designation per JESD 95-1, SPP-010.
4.
e
represents the solder ball grid pitch.
5. Symbol “
MD
” is the ball row matrix size in the “
D
” direction.
Symbol “
ME
” is the ball column matrix size in the “
E
” direct-
ion.
N
is the maximum number of solder balls for matrix si-
ze
MD
X
ME
.
6. Dimension “
b
” is measured at the maximum ball diameter
in a plane parallel to datum
Z
.
7.
SD
and
SE
are measured with respect to datums
A
and
B
and define the position of the center solder ball in the out-
er row. When there is an odd number of solder balls in the
outer row parallel to the
D
or
E
dimension, respectively,
SD
or
SE
= 0.000 when there is an even number of solder balls
in the outer row,
SD
or
SE
=
e
/2
8. “
X
” in the package variations denotes part is outer qualifi-
cation.
9. “
+
” in the package drawing indicate the theoretical center
of depopulated balls.
10. For package thickness
A
is the controlling dimension.
11.
A1
corner to be indentified by chamfer, ink mark, metalli-
zed markings indention or other means.
1
2
3
4
5
6
H
F
E
G
D
C
B
A
D
A
E
A1 CORNER INDEX MARK 11
B
D1
SE
7
E1
PIN 1 ID.
SD
7
6
A
A1
10
A2
Z
0.20
0.08 Z
0.25 Z
(4x)
//
b
0.15 M Z A B
0.08 M Z
e
PHYSICAL DIMENSIONS
48-Ball FBGA (6 x 8 mm)
相關PDF資料 |
PDF描述 |
|---|---|
| ES29BDS640D-90RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS640DT-90RTGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS640ET-70RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS640ET-90RTGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS640FT-70TGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ES29DS160ET-90TGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160F-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160F-70RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160F-70WCI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160FB-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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