參數(shù)資料
型號： ES29DS160EB-12RTG
廠商： 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述： 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述： 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 51/52頁
文件大?。?/td> 704K
代理商： ES29DS160EB-12RTG
ESI
51
Rev.1C January 5, 2006
ES29LV400D
Excel Semiconductor inc.
Document Title
4M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 0A
Mar. 15, 2004
Initial Release Version.
Rev. 0B
Apr. 23, 2004
1. The bias condtion of RESET# in Table 1 for A9 high-Voltage
method is changed from V
ID
to H.
2. The bias condition of A9 in Table 1 for A9 high-Voltage method
is added.
3. The typical byte and word program time are changed from
5us/7us to 6us/8us.
4. The dimension of FBGA is changed from 8 x 9mm to 6 x 8mm.
Rev. 0C
Dec. 1, 2004
1. The 60R is removed.
2. The 44pin-SO is removed.
3. The Icc3 (max) is changed from 5uA to 10uA.
4. The Icc4 (max) is changed from 5uA to 10uA.
5. The Icc5 (max) is changed from 5uA to 10uA.
6. The V
IL(max)
is changed from 0.8V to 0.5V.
7. The overall thickness of FBGA , A (max), is changed from 1.20
to 1.10. Therefore, ball height (A1) and body thickness (A2)
also is changed accordingly.
8. The ball diameter of FBGA, b(min), b(nom), b(max), is
changed from 0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40
respectively.
Rev. 0D
Dec. 13, 2004
1. The arrow from Erase Suspend Read to Read is changed to
Sector Erase.
2. V
LKO
(min), 2.3V is added
相關(guān)PDF資料
PDF描述
ES29DS160F-70RTG 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29BDS160EB-12RTG 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL160FT-70RTG 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL160FT-90RTG 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL320EB-12RTG 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ES29DS160EB-12TG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160ET-70WC 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160ET-80TG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160ET-90RTGI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160ET-90TGI 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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