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| 型號： | ES29DL800FT-90RTG |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 15/52頁 |
| 文件大?。?/td> | 704K |
| 代理商： | ES29DL800FT-90RTG |
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ESI
15
Rev.1C January 5, 2006
ES29LV400D
Excel Semiconductor inc.
Table 5. ES29LV400 Command Definitions
Command Definitions
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2~5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
A
Manufacturer ID
Word
4
555
AA
2AA
55
555
90
X00
4A
Byte
AAA
555
AAA
Device ID (Top)
Word
4
555
AA
2AA
55
555
90
X01
B9
Byte
AAA
555
AAA
X02
Device ID (Bottom)
Word
4
555
AA
2AA
55
555
90
X01
BA
Byte
AAA
555
AAA
X02
Sector Protect Verify
(Note 9)
Word
4
555
AA
2AA
55
555
90
(SA)X02
00/01
Byte
AAA
555
AAA
(SA)X04
Program
Word
4
555
AA
2AA
55
555
A0
PA
PD
Byte
AAA
555
AAA
Unlock Bypass
Word
3
555
AA
2AA
55
555
20
Byte
AAA
555
AAA
Unlock Bypass Program (Note 10)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 11)
2
XXX
90
XXX
00
Chip Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Byte
AAA
555
AAA
AAA
555
AAA
Sector Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Byte
AAA
555
AAA
AAA
555
Erase Suspend (Note 12)
1
XXX
B0
Erase Resume (Note 13)
1
XXX
30
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17-A12 uniquely select any sector.
9. The data is 00h for an unprotected sector and 01h for a
protected sector.
10. The Unlock Bypass command is required prior to the Unlock-
Bypass Program command.
11. The Unlock Bypass Reset command is required to return
to the read mode when the device is in the unlock bypass
mode.
12. The system may read and program in non-erasing sectors,
or enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during
a sector erase operation.
13. The Erase Resume command is valid only during the Erase
Suspend mode.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4. Data bits DQ15-DQ8 are don’t care in command sequences,
except for RD and PD
5. Unless otherwise noted, address bits A17-A11 are don’t cares.
6. No unlock or command cycles required when device is in
read mode.
7. The Reset command is required to return to the read mode
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a device is in the autoselect mode, or if DQ5
goes high (while the device is providing status information).
8. The fourth cycle of the autoselect command sequence
is a read cycle. Data bits DQ15-DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29DL800FT-90RTGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160D-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160D-70TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29DS160D-70WC | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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