參數(shù)資料
型號(hào)： ES29DL800FB-90TGI
廠商： 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述： 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述： 16兆（2米x 8/1M × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 1/53頁(yè)
文件大?。?/td> 719K
代理商： ES29DL800FB-90TGI
ESI
1
Rev. 0B January 5 , 2006
ES29LV160E
Excel Semiconductor inc.
ES29LV160E
16Mbit(2M x 8/1M x 16)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
GENERAL FEATURES
Single power supply operation
- 2.7V -3.6V for read, program and erase operations
Sector Structure
- 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors
- 64Kbyte x 31 sectors
Top or Bottom boot block
- ES29LV160ET for Top boot block device
- ES29LV160EB for Bottom boot block device
Package Options
- 48-pin TSOP
- 48-ball FBGA ( 6 x 8 mm )
- Pb-free packages
- All Pb-free products are RoHS-Compliant
Low Vcc write inhibit
Manufactured on 0.18um process technology
Compatible with JEDEC standards
- Pinout and software compatible with single-power
supply flash standard
DEVICE PERFORMANCE
Read access time
- 70ns / 90ns
Program and erase time
- Program time : 6us/byte, 8us/word ( typical )
- Sector erase time : 0.7sec/sector ( typical )
Power consumption (typical values)
- 200nA in standby or automatic sleep mode
- 9mA active read current at 5 MHz
- 15mA active write current during program or erase
Minimum 100,000 program/erase cycles per sector
20 Year data retention at
125
o
C
SOFTWARE FEATURES
Erase Suspend / Erase Resume
Data# poll and toggle for Program/erase status
CFI ( Common Flash Interface) supported
Unlock Bypass program
Autoselect mode
Auto-sleep mode after t
ACC
+ 30ns
HARDWARE FEATURES
Hardware reset input pin ( RESET#)
- Provides a hardware reset to device
- Any internal device operation is terminated and the
device returns to read mode by the reset
Ready/Busy# output pin ( RY/BY#)
- Provides a program or erase operational status
about whether it is finished for read or still being
progressed
Sector protection / unprotection ( RESET# , A9 )
- Hardware method of locking a sector to prevent
any program or erase operation within that sector
- Two methods are provided :
- In-system method by RESET# pin
- A9 high-voltage method for PROM programmers
Temporary Sector Unprotection ( RESET# )
- Allows temporary unprotection of previously
protected sectors to change data in-system
相關(guān)PDF資料
PDF描述
ES29DS160D-70WC 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160DT-90TGI 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160ET-70WC 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160ET-90TGI 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS160FB-90TGI 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ES29DL800FT-70RTG 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL800FT-70TGI 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL800FT-80TG 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL800FT-90RTG 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DL800FT-90RTGI 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*