參數(shù)資料
型號: ES29DL160DT-90RTGI
廠商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述: 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 的4Mb(512Kx 8/256K × 16),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 28/51頁
文件大?。?/td> 697K
代理商: ES29DL160DT-90RTGI
ESI
28
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
Test Condition
70
90
Output Load
1TTL gate
Output Load Capacitance, C
L
(including jig
capacitance)
30 pF
100 pF
Input Rise and Fall Times
5 ns
Input Pulse Levels
0.0 - 3.0 V
Input timing measurement reference levels
1.5 V
Output timing measurement reference levels
1.5 V
Table 8. Test Specifications
Key To Switching Waveforms
Device
Under
Test
3.3V
2.7k
C
L
6.2k
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
Figure 14. Test Setup
Note
:
Diodes are IN3064 or equivalent
Measurement Level
Output
Input
3.0V
0.0V
1.5V
1.5V
Figure 15. Input Waveforms and Measurement Levels
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