參數(shù)資料
型號(hào): ES29BDS800F-12RTG
廠(chǎng)商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 32兆(4米× 8/2M × 16),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 58/59頁(yè)
文件大小: 603K
代理商: ES29BDS800F-12RTG
ESI
58
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
Document Title
32M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 0A
Nov. 10, 2003
Initial Release Version.
Rev. 0B
Nov. 26, 2003
1. The typical program/erase current value changed from 30mA to
15mA.
2. The Table 6 for manufacture ID is changed to 4Ah.
3. The extended temperature range is removed and the commer-
cial temperature range is added.
Rev. 0C
Feb. 4, 2004
1. E/W cycle number is changed from 1,000,000 to 100,000.
2. CFI code is changed : 45h : 04h ----> 45h : 00h
Rev. 1A
Mar. 1, 2004
1. The format of datasheet is entirely changed and updated
2. 70ns product is removed
3. 80R product ( 80ns : Vcc = 3.0 ~ 3.6V) is newly added.
4. A command diagram is added.
5. Sector protection / unprotection algorithm by A9 high-voltage
method is described.
6. A limitation to the maximum number of E/W cycles in the Secu-
rity Sector is described (300 E/W cycles at Max.).
7. A product selection table is added.
8. Test condtions for the typical performance of program/erase :
after 100,000 E/W cycles ----> after 10,000 E/W cycles
Rev. 1B
Apr. 23, 2004
1. The bias condition of RESET# in Table 1 for A9 high-Voltage is
changed from V
ID
to H.
2. The bias condition of A9 in Table 1 for A9 high-Voltage method
is added.
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