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參數(shù)資料
| 型號： | ES29BDS640FT-80RTG |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 8Mbit（3米x 8/512K × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 1/50頁 |
| 文件大?。?/td> | 698K |
| 代理商： | ES29BDS640FT-80RTG |
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ESI
1
Rev. 1D January 5, 2006
ES29LV800D
Excel Semiconductor inc.
ES29LV800D
8Mbit(1M x 8/512K x 16)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
GENERAL FEATURES
Single power supply operation
- 2.7V -3.6V for read, program and erase operations
Sector Structure
- 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors
- 64Kbyte x 15sectors
Top or Bottom boot block
- ES29LV800DT for Top boot block device
- ES29LV800DB for Bottom boot block device
Package Options
- 48-pin TSOP
- 48-ball FBGA ( 6 x 8 mm )
- Pb-free packages
- All Pb-free products are RoHS-Compliant
Low Vcc write inhibit
Manufactured on 0.18um process technology
Compatible with JEDEC standards
- Pinout and software compatible with single-power
supply flash standard
DEVICE PERFORMANCE
Read access time
- 70ns / 90ns / 120ns
Program and erase time
- Program time : 6us/byte, 8us/word ( typical )
- Sector erase time : 0.7sec/sector ( typical )
Power consumption (typical values)
- 200nA in standby or automatic sleep mode
- 7mA active read current at 5 MHz
- 15mA active write current during program or erase
Minimum 100,000 program/erase cycles per sector
20 Year data retention at
125
o
C
SOFTWARE FEATURES
Erase Suspend / Erase Resume
Data# poll and toggle for Program/erase status
Unlock Bypass program
Autoselect mode
Auto-sleep mode after t
ACC
+ 30ns
HARDWARE FEATURES
Hardware reset input pin ( RESET#)
- Provides a hardware reset to device
- Any internal device operation is terminated and the
device returns to read mode by the reset
Ready/Busy# output pin ( RY/BY#)
- Provides a program or erase operational status
about whether it is finished for read or still being
progressed
Sector protection / unprotection ( RESET# , A9 )
- Hardware method of locking a sector to prevent
any program or erase operation within that sector
- Two methods are provided :
- In-system method by RESET# pin
- A9 high-voltage method for PROM programmers
Temporary Sector Unprotection ( RESET# )
- Allows temporary unprotection of previously
protected sectors to change data in-system
相關(guān)PDF資料 |
PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29BDS640FT-80TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS640FT-90RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800D-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS800D-70TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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