參數資料
型號: ES29BDS640FB-70WCI
廠商: 優(yōu)先(蘇州)半導體有限公司
英文描述: 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 32兆(4米× 8/2M × 16),3.0伏的CMOS只,引導扇區(qū)閃存
文件頁數: 49/58頁
文件大小: 765K
代理商: ES29BDS640FB-70WCI
ESI
49
Rev. 0A May 25, 2006
ES29LV320E
Excel Semiconductor inc.
A
ddress
OE#
WE#
RESET#
CE#
RY/BY#
t
WC
Figure 30. Alternate CE# Controlled
Write(Erase/Program) Operation Timings
t
BUSY
DQ7#
t
AH
t
AS
t
WH
t
RH
t
WHWH1 or 2
t
WS
t
GHEL
A0 for program
55 for erase
DATA
D
OUT
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PD for program
SA for sector erase
555 for chip erase
PA
t
CP
t
CPH
t
DS
t
DH
NOTES :
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data
3. DQ7# is the complement of the data written to the device. Dout is the data written to the device.
4. Waveforms are for the word mode.
AC CHARACTERISTICS
Data Polling
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