參數(shù)資料
型號: ES29BDS640ET-90RTGI
廠商: 優(yōu)先(蘇州)半導體有限公司
英文描述: 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 的4Mb(512Kx 8/256K × 16),3.0伏的CMOS只,引導扇區(qū)閃存
文件頁數(shù): 40/51頁
文件大?。?/td> 697K
代理商: ES29BDS640ET-90RTGI
ESI
40
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
A
ddress
OE#
WE#
RESET#
CE#
RY/BY#
t
WC
Figure 27. Alternate CE# Controlled
Write(Erase/Program) Operation Timings
t
BUSY
DQ7#
t
AH
t
AS
t
WH
t
RH
t
WHWH1 or 2
t
WS
t
GHEL
A0 for program
55 for erase
DATA
D
OUT
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PD for program
SA for sector erase
555 for chip erase
PA
t
CP
t
CPH
t
DS
t
DH
NOTES :
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data
3. DQ7# is the complement of the data written to the device. Dout is the data written to the device.
4. Waveforms are for the word mode.
AC CHARACTERISTICS
Data Polling
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ES29BDS640FT-70TGI 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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ES29BDS640FB-12RTG 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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