參數(shù)資料
型號: ES29BDS400ET-90RTGI
廠商: 優(yōu)先(蘇州)半導(dǎo)體有限公司
英文描述: 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 的4Mb(512Kx 8/256K × 16),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 35/51頁
文件大?。?/td> 697K
代理商: ES29BDS400ET-90RTGI
ES I
40
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
Address
OE#
WE#
RESET#
CE#
RY/BY#
tWC
Figure 27. Alternate CE# Controlled
Write(Erase/Program) Operation Timings
tBUSY
DQ7#
tAH
tAS
tWH
tRH
tWHWH1 or 2
tWS
tGHEL
A0 for program
55 for erase
DATA
DOUT
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PD for program
SA for sector erase
555 for chip erase
PA
tCP
tCPH
tDS
tDH
NOTES :
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data
3. DQ7# is the complement of the data written to the device. Dout is the data written to the device.
4. Waveforms are for the word mode.
AC CHARACTERISTICS
Data Polling
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