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參數(shù)資料
| 型號： | ES29BDS320DT-90RTGI |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 40/51頁 |
| 文件大小： | 697K |
| 代理商： | ES29BDS320DT-90RTGI |
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ES I
45
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
PACKAGE
xFBD 048
JEDEC
N/A
6.00 mm x 8.00 mm PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
1.10
OVERALL THICK
NESS
A1
0.21
0.25
0.29
BALL HEIGHT
A2
0.7
0.76
0.82
BODY THICKNESS
D
8.00 BSC
BODY SIZE
E
6.00 BSC
BODY SIZE
D1
5.60 BSC
BALL FOOTPRINT
E1
4.00 BSC
BALL FOOTPRINT
MD
8
ROW MATRIX SIZED
DIRECTION
ME
6
ROW MATRIX SIZED
DIRECTION
N
48
TOTAL BALL COUNT
b
0.30
0.35
0.40
BALL DIAMETER
e
0.80 BSC
BALL PITCH
SD / SE
0.40 BSC
SOLDER BALL
PLACEMENT
NOTES:
1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. All dimensions are in millimeters.
3. Ball position designation per JESD 95-1, SPP-010.
4. e represents the solder ball grid pitch.
5. Symbol “MD” is the ball row matrix size in the “D” direction.
Symbol “ME” is the ball column matrix size in the “E” direct-
ion. N is the maximum number of solder balls for matrix si-
ze MD X ME.
6. Dimension “b” is measured at the maximum ball diameter
in a plane parallel to datum Z.
7. SD and SE are measured with respect to datums A and B
and define the position of the center solder ball in the out-
er row. When there is an odd number of solder balls in the
outer row parallel to the D or E dimension, respectively, SD
or SE = 0.000 when there is an even number of solder balls
in the outer row, SD or SE = e/2
8. “X” in the package variations denotes part is outer qualifi-
cation.
9. “+” in the package drawing indicate the theoretical center
of depopulated balls.
10. For package thickness A is the controlling dimension.
11. A1 corner to be indentified by chamfer, ink mark, metalli-
zed markings indention or other means.
1
2
3
4
5
6
HF
E
G
DCB
A
D
A
E
A1 CORNER INDEX MARK 11
B
D1
SE
7
E1
PIN 1 ID.
SD
7
6
A
A1
10
A2
Z
0.20
0.08 Z
0.25 Z
(4x)
//
b
0.15 M Z A B
0.08 M Z
e
PHYSICAL DIMENSIONS
48-Ball FBGA (6 x 8 mm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ES29BDS320ET-90RTGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320FT-70TGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400DB-70TGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400E-90RWCI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400ET-90RTGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29BDS320DT-90TGI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320E-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320E-70WCI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320E-90WC | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320EB-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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