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參數(shù)資料
| 型號(hào)： | ES29BDS320DT-70WC |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 8Mbit（3米x 8/512K × 16），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 2/50頁(yè) |
| 文件大?。?/td> | 696K |
| 代理商： | ES29BDS320DT-70WC |
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ESI
2
Rev. 0A January 5, 2006
ES29LV800E
Excel Semiconductor inc.
The ES29LV800 is a 8 megabit, 3.0 volt-only flash
memory device, organized as 1M x 8 bits (Byte
mode) or 512K x 16 bits (Word mode) which is con-
figurable by BYTE#. Four boot sectors and fifteen
main sectors are provided : 16Kbytes x 1, 8Kbytes
x 2, 32Kbytes x 1 and 64Kbytes x 15. The device is
manufactured with ESI’s proprietary, high perfor-
mance and highly reliable 0.18um CMOS flash
technology. The device can be programmed or
erased in-system with standard 3.0 Volt Vcc supply
( 2.7V-3.6V) and can also be programmed in stan-
dard EPROM programmers. The device offers min-
imum endurance of 100,000 program/erase cycles
and more than 10 years of data retention.
The ES29LV800 offers access time as fast as 70ns
or 90ns, allowing operation of high-speed micropro-
cessors without wait states. Three separate control
pins are provided to eliminate bus contention : chip
enable (CE#), write enable (WE#) and output
enable (OE#).
All program and erase operation are automatically
and internally performed and controlled by embed-
ded program/erase algorithms built in the device.
The device automatically generates and times the
necessary high-voltage pulses to be applied to the
cells, performs the verification, and counts the num-
ber of sequences. Some status bits (DQ7, DQ6 and
DQ5) read by data# polling or toggling between
consecutive read cycles provide to the users the
internal status of program/erase operation: whether
it is successfully done or still being progressed.
The ES29LV800 is completely compatible with the
JEDEC standard command set of single power sup-
ply Flash. Commands are written to the internal
command register using standard write timings of
microprocessor and data can be read out from the
cell array in the device with the same way as used in
other EPROM or flash devices.
GENERAL PRODUCT DESCRIPTION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ES29BDS320FB-12RTG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320FT-70WC | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400D-70TG | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400D-70WC | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400D-70WCI | 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES29BDS320DT-90RTGI | 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320DT-90TGI | 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320E-12RTG | 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320E-70WCI | 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320E-90WC | 制造商:EXCELSEMI 制造商全稱(chēng):EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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