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參數(shù)資料
| 型號： | ES29BDS160F-12RTG |
| 廠商： | 優(yōu)先(蘇州)半導體有限公司 |
| 英文描述： | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆（4米× 8/2M × 16），3.0伏的CMOS只，引導扇區(qū)閃存 |
| 文件頁數(shù)： | 17/59頁 |
| 文件大?。?/td> | 603K |
| 代理商： | ES29BDS160F-12RTG |
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ESI
17
Rev. 2D Jan 5, 2006
ES29LV320D
Excel Semiconductor inc.
START
RESET# = V
ID
Set up sector
address
COUNT = 1
Wait 1us
First Write
Cycle = 60h
Sector Protect:
Write 60h to sec-
tor address with
A6 = 0, A1 = 1,
A0 = 0
Wait 150us
Verify Sector
Protect:
Write 40h to sec-
tor address with
A6 = 0, A1 = 1,
A0 = 0
Data = 01h
Protect another
sector
Remove V
ID
from RESET#
Write reset
command
Sector Protect
complete
Temporary Sector
Unprotect Mode
No
COUNT=25
Increment
COUNT
Read from sec-
tor address with
A6 = 0, A1 = 1,
A0 = 0
Device failed
No
Yes
Yes
No
No
Reset
COUNT = 1
Yes
Figure 3. In-System Sector
Protect Algorithm
Yes
START
RESET# = V
ID
Set up first sector
address
COUNT = 1
Wait 1us
First Write
Cycle = 60h
Sector Unpro-
tect:
Write 60h to sec-
tor address with
A6 = 1, A1 = 1,
Wait 15ms
Verify Sector
Unprotect:
Write 40h to sec-
tor address with
A6 = 1, A1 = 1,
A0 = 0
Data = 00h
Last sector
verified
Remove V
ID
from
RESET#
Write reset
command
Sector Unprotect
complete
Temporary Sector
Unprotect Mode
No
COUNT
=1000
Increment
COUNT
Read from sec-
tor address with
A6 = 1, A1 = 1,
A0 = 0
Device failed
No
Yes
Yes
No
No
Set up next
sector address
Yes
Yes
All sectors
protected
Protect all sectors:
The indicated por-
tion of the sector
protect algorithm
must be performed
for all unprotected
sectors prior to
issuing the first
sector unprotect
address
No
Yes
Figure 4. In-System Sector
Unprotect Algorithm
In-System Protection / Unprotection Method
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PDF描述 |
|---|---|
| ES29BDS320D-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320E-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320F-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400D-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400E-12RTG | 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ES29BDS160F-70RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160F-70WCI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160FB-12RTG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160FB-12TG | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160FB-70WCI | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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