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參數(shù)資料
| 型號(hào)： | ES25P80-75CG2Y |
| 廠商： | 優(yōu)先(蘇州)半導(dǎo)體有限公司 |
| 英文描述： | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| 中文描述： | 8Mbit的CMOS 3.0伏的閃存與75MHz的SPI總線接口 |
| 文件頁數(shù)： | 9/35頁 |
| 文件大?。?/td> | 450K |
| 代理商： | ES25P80-75CG2Y |
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ESI
9
Rev. 0D May, 11, 2006
ES25P80
Excel Semiconductor inc.
ADVANCED INFORMATION
INSTRUCTIONS
All instructions, addresses, and data are shifted in
and out of the device, starting with the most signifi-
cant bit. Serial Data Input (SI) is sampled on the first
rising edge of Serial Clock (SCK) after Chip Select
(CS#) is driven Low. Then, the one byte instruction
code must be shifted in to the device, most signifi-
cant bit first, on Serial Data Input (SI), each bit being
latched on the rising edges of Serial Clock (SCK).
The instruction set is listed in Table 3.
Every instruction sequence starts with a one byte
instruction code. Depending on the instruction, this
might be followed by address bytes, or by data
bytes, or by both or none. Chip Select (CS#) must be
driven High after the last bit of the instruction
sequence has been shifted in.
In the case of a Read Data Bytes (READ), Read Sta-
tus Register (RDSR), Read Data Bytes at higher
speed (FAST_READ), Read Identification (RDID) ,
Read Manufacturer and Device ID (RDMD), Read
Parameter Page (RDPARA) and Fast Read Parame-
ter Page (FRDPARA) instructions, the shifted-in
instruction sequence is followed by a data-out
sequence.
Chip Select (CS#) can be driven High after any bit
of the data-out sequence is being shifted out to ter-
minate the transaction.
In the case of a Page Program (PP), Program
Parameter Page (PPP), Sector Erase (SE), Bulk
Erase (BE), Parameter Page Erase(PE), Write Sta-
tus Register (WRSR), Write Enable (WREN), Deep
Power Down (DP) or Write Disable (WRDI) instruc-
tion, Chip Select (CS#) must be driven High exactly
at a byte boundary, otherwise the instruction is
rejected, and is not executed. That is, Chip Select
(CS#) must driven High when the number of clock
pulses after Chip Select (CS#) being driven Low is
an exact multiple of eight.
All attempts to access the memory array during a
Write Status Register cycle, Program cycle or Erase
cycle are ignored, and the internal Write Status
Register cycle, Program cycle or Erase cycle con-
tinues unaffected.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ES25P80-75IC2R | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75IC2T | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75IC2Y | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75IG2R | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75IG2T | 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES25P80-75IC2R | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75IC2T | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75IC2Y | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75IG2R | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
| ES25P80-75IG2T | 制造商:EXCELSEMI 制造商全稱:EXCELSEMI 功能描述:8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface |
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