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參數(shù)資料
| 型號(hào)： | ES1D |
| 廠商： | GE Security, Inc. |
| 英文描述： | Surface Mount Ultrafast Efficient Plastic Rectifier(表貼型超快速效應(yīng)塑膠整流器) |
| 中文描述： | 表面貼裝超快速高效的塑料整流器（表貼型超快速效應(yīng)塑膠整流器） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 80K |
| 代理商： | ES1D |
4/98
ES1A THRU ES1D
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 200 Volts
Forward Current -
1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Ideally suited for use in
very high frequency switching power supplies,
inverters and as a free wheeling diodes
Ultrafast recovery times for high efficiency
Low forward voltage
Low leakage current
Glass passivated chip junction
High temperature soldering guaranteed:
250°C/10 seconds on terminals
MECHANICAL DATA
Case:
JEDEC DO-214AC molded plastic body over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
ES1A
EA
50
35
50
ES1B
EB
100
70
100
ES1C
EC
150
105
150
ES1D
ED
200
140
200
UNITS
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=120°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 0.6A
at
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Maximum reverse recovery time
(NOTE 2)
Maximum stored charge
(NOTE 2)
Typical junction capacitance
(NOTE 3)
Maximum thermal resistance
(NOTE 4)
V
RRM
V
RMS
V
DC
Volts
Volts
Volts
I
(AV)
1.0
Amp
I
FSM
30.0
Amps
0.865
0.920
5.0
100
15.0
25.0
35.0
10.0
25.0
7.0
85.0
35.0
-55 to +150
1.0A
T
A
=25°C
T
A
=100°C
V
F
Volts
I
R
μ
A
t
rr
ns
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
t
rr
ns
Q
rr
nC
C
J
R
Θ
JA
R
Θ
JL
T
J
, T
STG
pF
°C/W
Operating and storage temperature range
°C
NOTES
:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) t
rr
and Q
rr
measured at: I
F
=0.6A, V
R
=30V, di/dt=50A/
μ
s, I
rr
=10% I
RM
for measurement of t
rr
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 volts
(4) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad area
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
DO-214AC
Dimensions in inches and (millimeters)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES1D F2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 200V 1A 2-Pin SMA T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 200V 1A 2-Pin SMA T/R |
| ES1D R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 200V 1A 2-Pin SMA T/R |
| ES1D R3 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 200V 1A 2-Pin SMA T/R |
| ES1D | 制造商:Vishay Semiconductors 功能描述:DIODE ULTRA-FAST SMD 1A 200V |
| ES1D | 制造商:Fairchild Semiconductor Corporation 功能描述:Ultra Fast Recovery Power Rectifier |
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