
E
ES2A-ES2D, Rev. A
2.0 Ampere Superfast Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Parameter
Device
Units
2A
50
35
50
2B
100
70
100
2C
150
105
150
2D
200
140
200
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage
Maximum Reverse Current
@ rated V
R
(Rated V
R
)
T
A
= 25
°
C
T
A
= 100
°
C
10
350
20
μ
A
μ
A
nS
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Maximum Forward Voltage @ 2.0 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
0.90
18
V
pF
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 110
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient**
Thermal Resistance, Junction to Lead**
Storage Temperature Range
Operating Junction Temperature
2.0
A
i
f(surge)
50
A
P
D
1.66
13.3
75
20
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JL
T
stg
T
J
-50 to +150
-50 to +150
ES2A - ES2D
Features
For surface mount applications.
Glass passivated junction.
Low profile package.
Easy pick and place.
Built-in strain relief.
Superfast recovery times for
high efficiency.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
2
1
0.220 (5.588)
0.200 (5.080)
0.185 (4.699)
0.160 (4.064)
0.096 (2.438)
0.083 (2.108)
0.155 (3.937)
0.130 (3.302)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
0.050 (1.270)
0.030 (0.762)
0.083 (2.108)
0.075 (1.905
)
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Discrete POWE R & Signal
Technologies