參數(shù)資料
型號(hào): PPBSS8110Y
廠商: NXP Semiconductors N.V.
英文描述: 100 V, 1 A NPN low VCEsat (BISS) transistor
中文描述: 100伏,1安NPN型低飽和壓降(BISS)晶體管
文件頁數(shù): 1/13頁
文件大?。?/td> 107K
代理商: PPBSS8110Y
1.
Product profile
1.1 General description
NPN low V
CEsat
transistor in a SOT363 (SC-88) plastic package.
1.2 Features
I
SOT363 package
I
Low collector-emitter saturation voltage V
CEsat
I
High collector current capability I
C
and I
CM
I
High efficiency reduces heat generation.
1.3 Applications
I
Major application segments:
N
Automotive 42 V power
N
Telecom infrastructure
N
Industrial.
I
Peripheral driver:
N
Driver in low supply voltage applications (e.g. lamps and LEDs)
N
Inductive load driver (e.g. relays, buzzers and motors).
I
DC-to-DC converter.
1.4 Quick reference data
PBSS8110Y
100 V, 1 A NPN low V
CEsat
(BISS) transistor
Rev. 01 — 2 June 2004
Product data sheet
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
100
1
3
200
Unit
V
A
A
m
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