- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98008 > MAT02FHZ (ANALOG DEVICES INC) 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 PDF資料下載
參數(shù)資料
| 型號： | MAT02FHZ |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | METAL CAN-6 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 260K |
| 代理商： | MAT02FHZ |
OBSOLETE
a
Low Noise, Matched
Dual Monolithic Transistor
MAT02
FEATURES
Low Offset Voltage: 50
V max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/
√Hz max
High Gain (hFE):
500 min at IC = 1 mA
300 min at IC = 1
A
Excellent Log Conformance: rBE
0.3
Low Offset Voltage Drift: 0.1
V/ C max
Improved Direct Replacement for LM194/394
NOTE
Substrate is connected to case on TO-78 package.
Substrate is normally connected to the most negative
circuit potential, but can be floated.
PIN CONNECTION
TO-78
(H Suffix)
PRODUCT DESCRIPTION
The design of the MAT02 series of NPN dual monolithic tran-
sistors is optimized for very low noise, low drift and low rBE.
Precision Monolithics’ exclusive Silicon Nitride “Triple-
Passivation” process stabilizes the critical device parameters
over wide ranges of temperature and elapsed time. Also, the high
current gain (hFE) of the MAT02 is maintained over a wide
range of collector current. Exceptional characteristics of the
MAT02 include offset voltage of 50
V max (A/E grades) and
150
V max F grade. Device performance is specified over the
full military temperature range as well as at 25
°C.
Input protection diodes are provided across the emitter-base
junctions to prevent degradation of the device characteristics
due to reverse-biased emitter current. The substrate is clamped
to the most negative emitter by the parasitic isolation junction
created by the protection diodes. This results in complete isola-
tion between the transistors.
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
Analog Devices, Inc., 2002
REV. E
The MAT02 should be used in any application where low
noise is a priority. The MAT02 can be used as an input
stage to make an amplifier with noise voltage of less than
1.0 nV/
√Hz at 100 Hz. Other applications, such as log/antilog
circuits, may use the excellent logging conformity of the
MAT02. Typical bulk resistance is only 0.3
to 0.4 . The
MAT02 electrical characteristics approach those of an ideal
transistor when operated over a collector current range of 1
A to 10 mA. For applications requiring multiple devices
see MAT04 Quad Matched Transistor data sheet.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MAT03FHZ | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-03FH | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-03EH | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT03GBC | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT04BIEY | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAT02NBC | 制造商:Analog Devices 功能描述: |
| MAT03 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Low Noise, Matched Dual PNP Transistor |
| MAT03AH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT03AH/883C | 制造商:Rochester Electronics LLC 功能描述:HI-SPEED DUAL PNP TRANS-L - Bulk |
| MAT03ARC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。