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    參數(shù)資料
    型號: EN29LV800B70RTI
    廠商: Electronic Theatre Controls, Inc.
    英文描述: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
    中文描述: 8兆位(1024K × 8位/為512k × 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
    文件頁數(shù): 1/43頁
    文件大?。?/td> 239K
    代理商: EN29LV800B70RTI
    EN29LV800
    FEATURES
    4800 Great America Parkway, Suite 202
    Santa Clara, CA 95054
    Tel: 408-235-8680
    Fax: 408-235-8685
    1
    Rev 0.4 Release Date: 2002/01/29
    Single power supply operation
    - Full voltage range: 2.7-3.6 volt read and write
    operations for battery-powered applications.
    - Regulated voltage range: 3.0-3.6 volt read
    and write operations and for compatibility with
    high performance 3.3 volt microprocessors.
    Manufactured on 0.28 μm process technology
    High performance
    - Access times as fast as 70 ns
    Low power consumption (typical values at 5
    MHz)
    - 7 mA typical active read current
    - 15 mA typical program/erase current
    - 1
    μ
    A typical standby current (standard access
    time to active mode)
    Flexible Sector Architecture:
    - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
    fifteen 64 Kbyte sectors (byte mode)
    - One 8 Kword, two 4 Kword, one 16 Kword
    and fifteen 32 Kword sectors (word mode)
    - Supports full chip erase
    - Individual sector erase supported
    - Sector protection:
    Hardware locking of sectors to prevent
    program or erase operations within individual
    sectors
    GENERAL DESCRIPTION
    Additionally, temporary Sector Group
    Unprotect allows code changes in previously
    locked sectors.
    High performance program/erase speed
    - Byte/Word program time: 8μs typical
    - Sector erase time: 500ms typical
    JEDEC Standard program and erase
    commands
    JEDEC standard
    DATA
    polling and toggle
    bits feature
    Single Sector and Chip Erase
    Sector Unprotect Mode
    Embedded Erase and Program Algorithms
    Erase Suspend / Resume modes:
    Read or program another Sector during
    Erase Suspend Mode
    0.28 μm double-metal double-poly
    triple-well CMOS Flash Technology
    Low Vcc write inhibit < 2.5V
    >100K program/erase endurance cycle
    48-pin TSOP (Type 1)
    Commercial Temperature Range
    The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
    organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10μs.
    The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to
    eliminate the need for WAIT states in high-performance microprocessor systems.
    The EN29LV800 has separate Output Enable (
    OE
    ), Chip Enable (
    CE
    ), and Write Enable (WE)
    controls, which eliminate bus contention issues. This device is designed to allow either single
    Sector
    or full chip erase operation, where each Sector can be individually protected against program/erase
    operations or temporarily unprotected to erase or program. The device can sustain a minimum of
    100K program/erase cycles on each Sector.
    EN29LV800
    8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
    Boot Sector Flash Memory, CMOS 3.0 Volt-only
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