參數(shù)資料
型號(hào)： EN29LV640TT-90TCP
廠商： Eon Silicon Solution Inc.
英文描述： 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述： 64兆位（8米× 8位/分x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只
文件頁(yè)數(shù)： 23/53頁(yè)
文件大?。?/td> 495K
代理商： EN29LV640TT-90TCP
COMMAND DEFINITIONS
The operations of the device are selected by one or more commands written into the command
register. Commands are made up of data sequences written at specific addresses via the
command register. The sequences for the specified operation are defined in the Command
Definitions table (Table 9). Incorrect addresses, incorrect data values or improper sequences will
reset the device to Read Mode.
Table 9. EN29LV640T/B Command Definitions
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
Bus Cycles
1
P
st
Addr
RA
P
Cycle
Data
RD
2
P
nd
Addr
P
Cycle
Data
3
P
rd
P
Cycle
Data
4
P
th
P
Cycle
Data
5
P
th
Addr
P
Cycle
Data
6
P
th
P
Cycle
Data
Command
Sequence
C
Addr
Addr
Addr
Read
1
Reset
1
xxx
F0
000
100
000
200
x01
7F
1C
7F
1C
Word
555
2AA
555
Manufacturer ID
Byte
4
AAA
AA
555
55
AAA
90
Word
555
2AA
555
22C9
Device ID
Top Boot
Byte
4
AAA
AA
555
55
AAA
90
x02
C9
Word
555
2AA
555
x01
22CB
Device ID
Bottom Boot
Byte
4
AAA
AA
555
55
AAA
90
x02
(SA)
X02
(SA)
X04
CB
00
01
00
01
Word
555
2AA
555
A
Sector Protect
Verify
Byte
4
AAA
AA
555
55
AAA
90
Word
555
2AA
555
Program
Byte
Word
4
AAA
555
AA
555
2AA
55
AAA
555
A0
PA
PD
Unlock Bypass
Byte
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program
2
XXX
A0
PA
PD
Unlock Bypass Reset
2
XXX
555
AAA
555
AAA
90
XXX
2AA
555
2AA
555
00
555
AAA
555
AAA
555
AAA
555
AAA
2AA
555
2AA
555
555
AAA
Word
Byte
Word
Byte
Chip Erase
6
AA
55
80
AA
55
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Sector Erase Suspend
1
xxx
B0
Sector Erase Resume
1
xxx
55
AA
30
Word
Byte
CFI Query
1
98
Address and Data values indicated are in hex. Unless specified, all bus cycles are write cycles
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A20-A12 uniquely select any Sector.
Notes:
1. The data is 00H for an unprotected sector/sector block and 01H for a protected sector/sector block.
2.
The data is 88H for factory locked and 08H for not factory locked.
相關(guān)PDF資料
PDF描述
EN29LV640TT-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TT-90TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640B-90TP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-70B 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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