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參數(shù)資料
| 型號： | EN29LV640TT-70TC |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 64兆位（8米× 8位/分x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁數(shù)： | 20/53頁 |
| 文件大?。?/td> | 495K |
| 代理商： | EN29LV640TT-70TC |
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This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
Table 6. System Interface String
Addresses
(Byte Mode)
Data
0027h
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt
0036h
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
3Eh
0004h
Typical timeout per single byte/word write 2
P
N
0000h
Typical timeout for Min, size buffer write 2
P
N
supported)
42h
000Ah Typical timeout per individual block erase 2
P
N
44h
0000h
Typical timeout for full chip erase 2
P
N
46h
0005h
Max. timeout for byte/word write 2
P
N
48h
0000h
Max. timeout for buffer write 2
P
N
4Ah
0004h
Max. timeout per individual block erase 2
P
N
0000h
Max timeout for full chip erase 2
P
N
supported)
Addresses
(Word Mode)
Description
1Bh
36h
1Ch
38h
1Dh
1Eh
1Fh
P
S
20h
40h
P
S (00h = not
21h
22h
23h
24h
25h
P
ms
P
ms (00h = not supported)
P
times typical
P
times typical
P
times typical
26h
4Ch
P
times typical (00h = not
Table 7. Device Geometry Definition
Addresses
(Byte Mode)
Data
4Eh
0017h
Device Size = 2
P
N
50h
52h
0000h
54h
56h
0000h
(00h = not supported)
58h
0002h
Number of Erase Block Regions within device
5Ah
5Ch
5Eh
60h
0000h
62h
64h
66h
68h
0001h
6Ah
6Ch
6Eh
70h
0000h
72h
74h
76h
78h
0000h
Addresses
(Word mode)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Description
P
bytes
0002h
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
P
N
0000h
P
0007h
0000h
0020h
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
007Eh
0000h
0000h
Erase Block Region 2 Information
0000h
0000h
0000h
Erase Block Region 3 Information
0000h
0000h
0000h
Erase Block Region 4 Information
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV640TT-70TCP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640 | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640H-90BC | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640H-90BCP | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640H-90BI | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800AB-70TC | 制造商:Eon Silicon Solution Inc 功能描述: |
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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