參數(shù)資料
型號(hào)： EN29LV640T-70T
廠商： Eon Silicon Solution Inc.
英文描述： 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述： 64兆位（8米× 8位/分x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只
文件頁(yè)數(shù)： 22/53頁(yè)
文件大小： 495K
代理商： EN29LV640T-70T
Hardware Data protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the
following hardware data protection measures prevent accidental erasure or programming, which
might otherwise be caused by false system level signals during Vcc power up and power down
transitions, or from system noise.
Low V
B
CC
When Vcc is less than V
B
LKO
Vcc power up and power down. The command register and all internal program/erase circuits are
disabled, and the device resets. Subsequent writes are ignored until Vcc is greater than V
B
LKO
system must provide the proper signals to the control pins to prevent unintentional writes when Vcc
is greater than V
B
LKO
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = V
B
IL
write cycle, CE# and WE# must be a logical zero while OE# is a logical one. If CE#, WE#, and OE#
are all logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with CE# = V
B
IL
WE#.
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
B
Write Inhibit
B
, the device does not accept any write cycles. This protects data during
B
. The
B
.
B
, CE# = V
B
IH
B
, or WE# = V
B
IH
B
. To initiate a
B
, WE#= V
B
IL
B
and OE# = V
B
IH
B
, the device will not accept commands on the rising edge of
相關(guān)PDF資料
PDF描述
EN29LV640T-70TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-70TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-70TP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TB-70BI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TB-70BIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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