參數(shù)資料
型號(hào): EN29LV640B-90T
廠商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 64兆位(8米× 8位/分x 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 37/53頁
文件大?。?/td> 495K
代理商: EN29LV640B-90T
Test Conditions
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
Test Specifications
Test Conditions
Output Load
Output Load Capacitance, C
B
L
Input Rise and Fall times
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
-70
-90
Unit
pF
ns
V
1 TTL Gate
100
5
0.0-3.0
B
30
5
0.0-3.0
1.5
1.5
V
1.5
1.5
V
Device under Test
C
L
6.2 k
Ω
2.7 k
Ω
3.3 V
Note: Diodes are IN3064 or equivalent
相關(guān)PDF資料
PDF描述
EN29LV640B-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640B-90TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TT-70TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TT-70TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TT-90BC 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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