參數(shù)資料
型號: EN29LV640B-90BIP
廠商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 64兆位(8米× 8位/分x 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 53/53頁
文件大小: 495K
代理商: EN29LV640B-90BIP
Revisions List
Revision No
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
Description
Date
A
Initial Release
1. Move the feature of SECURED SILICON SECTOR
2. Change the notes for 70 ns products from Vcc = 2.7V – 3.6V
to Vcc = 3.0V – 3.6V at Table 12. Read-only Operations
Characteristics in page 40
2007/3/13
B
2007/05/16
相關(guān)PDF資料
PDF描述
EN29LV640B-90BP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640B-90T 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640B-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640B-90TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640TT-70TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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